Characterization of Nb-doped Pb(Zr,Ti)O3 films deposited on stainless steel and silicon substrates by RF-magnetron sputtering for MEMS applications
✍ Scribed by Takamichi Fujii; Yoshikazu Hishinuma; Tsuyoshi Mita; Takayuki Naono
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 583 KB
- Volume
- 163
- Category
- Article
- ISSN
- 0924-4247
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✦ Synopsis
Piezoelectric Nb-doped Pb(Zr,Ti)O 3 thin films (PNZT) were deposited on stainless steel and silicon wafer substrates using RF-magnetron sputtering with the aim of micro-electromechanical systems (MEMS) applications. The obtained films on both kinds of substrates were strongly uniaxially oriented, for stainless steel substrate in (0 0 1) direction, and for silicon substrate in (1 0 0) direction, respectively. Resonance measurements of diaphragm structures with PNZT films found Young's modulus of the obtained film to be 49 GPa. Displacement measurements on both diaphragm structures resulted in piezoelectric coefficients of d 31 = -217 pm/V for stainless steel substrate and d 31 = -259 pm/V for silicon substrate, demonstrating that both substrates are feasible for MEMS applications with sputtered PNZT film.