Amorphous silicon, a-Si, thin films were prepared from SiH, by plasma glow discharge. Film characterization was accomplished using ir and -vfi optical measurements. Differences observed in the energy gap values, optically and photoelectrochemically determined, were correlated with the substrate temp
Formation of nanocrystallites in amorphous silicon thin films
β Scribed by Olaf Schoenfeld; X. Zhao; T. Hempel; J. Blaesing; Y. Aoyagi; T. Sugano
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 254 KB
- Volume
- 142
- Category
- Article
- ISSN
- 0022-0248
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