Photoelectrochemical measurements of amorphous silicon thin films

✍ Scribed by J. Herrero; M.T. Gutiérrez

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 444 KB
• Volume: 36
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(91)85294-h

✦ Synopsis

Amorphous silicon, a-Si, thin films were prepared from SiH, by plasma glow discharge. Film characterization was accomplished using ir and -vfi optical measurements. Differences observed in the energy gap values, optically and photoelectrochemically determined, were correlated with the substrate temperature during the deposition process. Photoelectrochemical behaviour of intrinsic a-Si thin films under white light illumination in aqueous electrolytes showed both n-and p-type photoconductivity with a partial stability in ferro-ferricyanide.