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Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si〈1 0 0〉

✍ Scribed by V. Venkataraman; S. Rajagopalan; P. Manoravi; A.K. Balamurugan; A. Ramalingam; A.K. Tyagi


Book ID
113785110
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
162 KB
Volume
38
Category
Article
ISSN
0025-5408

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Effects of stress on the formation and growth of nickel silicides in Ni thin films on (0 0 1)Si have been investigated. Compressive stress induced by backside SiO 2 film on the silicon substrate was found to retard significantly the formation of Ni 2 Si, NiSi and NiSi 2 on (0 0 1)Si. On the other ha