Synthesis of thin buried CoSi2 layers by
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R. Jebasinski; S. Mantl; Ch. Dieker
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Article
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1992
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Elsevier Science
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English
β 354 KB
The formation of Si/CoSi 2/Si heterostructures by high-dose cobalt implantation was studied for the range of implantation energy 20-200 keV. Various implantation and post-implantation annealing procedures were investigated in order to determine the conditions for producing the thinnest possible CoSi