𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation and stability of AsH bonds in H-implanted GaAs

✍ Scribed by H.J. Stein


Book ID
113282008
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
319 KB
Volume
59-60
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Photoacoustic and photoluminescence stud
✍ Srinivasan, R. ;Sanjeeviraja, C. ;Ramachandran, K. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 122 KB

## Abstract The surface of silicon‐doped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^–2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantat