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Raman scattering studies in H+ and He+ implanted n-GaAs

✍ Scribed by N. Dharmarasu; B. Sundarakkannan; R. Kesavamoorthy; K.G.M. Nair; J. Kumar

Book ID
114170496
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
181 KB
Volume
145
Category
Article
ISSN
0168-583X

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## Abstract The surface of silicon‐doped GaAs (100) grown by the vertical Bridgman method has been implanted with H^+^ ions at 30 keV for various doses from 10^14^ to 10^17^ cm^–2^ and studied using photoacoustic and photoluminescence spectroscopy to understand the effects of hydrogen ion implantat