FMR linewidths of YIG films fabricated byex situpost-annealing of amorphous films deposited by rf magnetron sputtering

✍ Scribed by Kang, Young-Min ;Ulyanov, Alexander N. ;Yoo, Sang-Im

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 312 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622412

✦ Synopsis

Abstract

FMR linewidths of Y~3~Fe~5~O~12~ (YIG) films fabricated by ex situ post‐annealing of amorphous films deposited by radio frequency magnetron sputtering are reported. Amorphous YIG films were deposited on both thermally oxidized Si(100) and Gd~3~Ga~5~O~12~ (GGG) (111) substrates and subsequently crystallized by ex situ post‐annealing (600–900 °C) in two different oxygen atmospheres (air and 500 ppm O~2~). The compositions of as‐deposited films were very sensitive to the oxygen partial pressure (P) of the sputtering gas. During the post‐annealing process, crystalline YIG phase started to grow upward on the substrates. High‐quality YIG films showing narrow FMR linewidths (Δ__H__) of 5.3 and 70 Oe for GGG and thermally oxidized Si substrates, respectively, could be grown from the amorphous films deposited in pure Ar gas, composed of the cation ratio (Y:Fe = 3.04:4.96) close to the stoichiometric YIG. A reduced oxygen annealing atmosphere was found more effective than air for obtaining narrower FMR linewidths. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)