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Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review

โœ Scribed by S. Sinharoy


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
971 KB
Volume
187
Category
Article
ISSN
0040-6090

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Ga and Al metal dot arrays were formed on epitaxial CaF, films on Si( 111) substrates, where nucleation sites were controlled by two methods: alignment on step edges of CaF,, and local surface modification by focused electron beam exposure. Multitunneling junctions (MTJ) using self-ordering metal do