Site controlled metal and semiconductor quantum dots on epitaxial fluoride films

✍ Scribed by K. Tsutsui; K. Kawasaki; M. Mochizuki; T. Matsubara

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 328 KB
• Volume: 47
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00171-9

✦ Synopsis

Ga and Al metal dot arrays were formed on epitaxial CaF, films on Si( 111) substrates, where nucleation sites were controlled by two methods: alignment on step edges of CaF,, and local surface modification by focused electron beam exposure. Multitunneling junctions (MTJ) using self-ordering metal dot arrays on the step edges showed Coulomb blockade characteristics at 55K. The electron beam modification method showed possibility of two dimensional site control of quantum dots. GaAs quantum dots were formed from the Ga dots by supplying As molecular beam afterward, and their photoluminescence was observed.