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Fluence dependent concentration of low-energy Ga implanted in Si

โœ Scribed by H. Gnaser; J. Steltmann; H. Oechsner; J. Steltmann; H. Oechsner


Book ID
113284634
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
306 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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One hour 500 ยฐC air annealing induced movement of implanted Au in Si have been studied for 32 keV Au implantation in Si, in the fluence range of 1 ร‚ 10 15 -1 ร‚ 10 17 ions cm ร€2 . Samples were characterized using Rutherford backscattering spectrometry and cross-sectional transmission electron microsc