Study of annealing induced redistributio
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G. Sahu; B. Joseph; H.P. Lenka
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Article
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2010
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Elsevier Science
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English
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One hour 500 ยฐC air annealing induced movement of implanted Au in Si have been studied for 32 keV Au implantation in Si, in the fluence range of 1 ร 10 15 -1 ร 10 17 ions cm ร2 . Samples were characterized using Rutherford backscattering spectrometry and cross-sectional transmission electron microsc