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First-principles studies of kinetics in epitaxial growth of III–V semiconductors

✍ Scribed by P. Kratzer; E. Penev; M. Scheffler


Book ID
111707041
Publisher
Springer
Year
2002
Tongue
English
Weight
275 KB
Volume
75
Category
Article
ISSN
1432-0630

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The optical properties of amorphous group III-V compound semiconductors were investigated through the first principles calculations. The imaginary parts (ε 2 ) of dielectric function for amorphous GaAs, InAs, and InSb are given, respectively. There is a single broad peak found in the ε 2 spectrum. B