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First-principles study of Nitrogen-induced band-gap reduction in III-V semiconductors

โœ Scribed by M. Ishikawa; T. Nakayama


Publisher
Elsevier
Year
2010
Tongue
English
Weight
627 KB
Volume
3
Category
Article
ISSN
1875-3892

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Optical properties of amorphous IIIโ€“V co
โœ Liang Wang; Xiaoshuang Chen; Wei Lu; Yan Huang; Jijun Zhao ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 669 KB

The optical properties of amorphous group III-V compound semiconductors were investigated through the first principles calculations. The imaginary parts (ฮต 2 ) of dielectric function for amorphous GaAs, InAs, and InSb are given, respectively. There is a single broad peak found in the ฮต 2 spectrum. B