𝔖 Bobbio Scriptorium

✦ LIBER ✦

First-order parameter extraction on enhancement silicon MOS transistors

✍ Scribed by Hamer, M.F.

Book ID: 114454200
Publisher: The Institution of Electrical Engineers
Year: 1986
Weight: 740 KB
Volume: 133
Category: Article
ISSN: 0143-7100
DOI: 10.1049/ip-i-1.1986.0011

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simulation of electrical parameters of c

Simulation of electrical parameters of channels of silicon MOS transistors on a deformed substrate

✍ V. V. Filippov; B. K. Petrov; Yu. M. Myasnyankin 📂 Article 📅 2010 🏛 Springer 🌐 English ⚖ 200 KB

[IEEE 2009 10th International Conference

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Accurate effective mobility extraction in SOI MOS transistors

✍ Thomas, S.M.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.; Lander, R.J.P.; Vellia 📂 Article 📅 2009 🏛 IEEE ⚖ 589 KB

[IEEE Conference on Electron Devices, 20

[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2-4 Feb. 2005)] Conference on Electron Devices, 2005 Spanish - An internet application to perform parameter extraction in MOS transistors

✍ Pascual, P.; Picos, R.; Roca, M.; Iniguez, B.; Garcia-Moreno, E. 📂 Article 📅 2005 🏛 IEEE ⚖ 584 KB

[IEEE 2010 International Conference on M

[IEEE 2010 International Conference on Microelectronic Test Structures (ICMTS) - Hiroshima, Japan (2010.03.22-2010.03.25)] 2010 International Conference on Microelectronic Test Structures (ICMTS) - New RF intrinsic parameters extraction procedure for advanced MOS transistors

✍ Tinoco, J. C.; Martinez-Lopez, A. G.; Emam, M.; Raskin, J.-P. 📂 Article 📅 2010 🏛 IEEE ⚖ 127 KB

[IEEE 2012 10th International Symposium

[IEEE 2012 10th International Symposium on Electronics and Telecommunications (ISETC) - Timisoara, Timis, Romania (2012.11.15-2012.11.16)] 2012 10th International Symposium on Electronics and Telecommunications - SPICE parameters extraction methods of MOS transistors under ionizing irradiation action

✍ Rusanovschi, V.I.; Avram, A.I.; Rusanovschi, M. 📂 Article 📅 2012 🏛 IEEE ⚖ 675 KB

[IEEE 1989 International Conference on M

[IEEE 1989 International Conference on Microelectronic Test Structures - Edinburgh, UK (13-14 March 1989)] Proceedings of the 1989 International Conference on Microelectronic Test Structures - Enhanced MOS parameter extraction and SPICE modelling for mixed analogue and digital circuit simulation

✍ Ankele, B.; Holzl, W.; O'Leary, P. 📂 Article 📅 1989 🏛 IEEE ⚖ 530 KB