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Simulation of electrical parameters of channels of silicon MOS transistors on a deformed substrate

โœ Scribed by V. V. Filippov; B. K. Petrov; Yu. M. Myasnyankin


Book ID
111444818
Publisher
Springer
Year
2010
Tongue
English
Weight
200 KB
Volume
44
Category
Article
ISSN
1063-7826

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