A simple model of MOS transistors on large-grain polycrystalline silicon
β Scribed by Morales-Acevedo, A.
- Publisher
- John Wiley and Sons
- Year
- 1985
- Tongue
- English
- Weight
- 402 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
## Abstract In this paper a simple model of recrystallization is presented for crystallization of larger crystals than such ones, for which the explanation of Ostwald ripening can hold. Equations describing the particle size distribution are formulated and solved for a special case. The results obt
Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold cha