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Field emission property of copper nitride thin film deposited by reactive magnetron sputtering

โœ Scribed by T. Wang; X.J. Pan; X.M. Wang; H.G. Duan; R.S. Li; H. Li; E.Q. Xie

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
289 KB
Volume
254
Category
Article
ISSN
0169-4332

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Aluminium nitride thin films deposited b
Aluminium nitride thin films deposited by DC reactive magnetron sputtering
โœ V. Dimitrova; D. Manova; T. Paskova; Tz. Uzunov; N. Ivanov; D. Dechev ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 375 KB

AlN-films prepared by dc reactive magnetron sputtering. AlN in an Ar+N 2 gas mixture have been prepared and their microstructure, hardness, refractive index and IR transmittance examined. At l = 640 nm the refractive index was 1.93 and k = 3ร—10 -3 ; high transmission occurred between [??] structure