๐”– Bobbio Scriptorium
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Field Effect on Silicon Transistors

โœ Scribed by Schwartz, B.; Levy, M.


Book ID
114568864
Publisher
Institute of Electrical and Electronics Engineers
Year
1960
Tongue
English
Weight
793 KB
Volume
48
Category
Article
ISSN
0096-8390

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Silicon-on-insulator non-volatile field-
โœ J.R. Schwank; M.R. Shaneyfelt; T.L. Meisenheimer; B.L. Draper; K. Vanhesden; D.M ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 104 KB

Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI substrate, the mobile protons in the buried oxide were