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Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric

โœ Scribed by Y.Y. Tan; L.W. Tan; K.D.G.I. Jayawardena; J.V. Anguita; J.D. Carey; S.R.P. Silva


Book ID
116899489
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
701 KB
Volume
161
Category
Article
ISSN
0379-6779

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We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operat