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Effect of pressure on the growth of the crystallites of low pressure chemical vapour deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin film transistors

✍ Scribed by C. A. Dimitriadis; J. Stoemenos; P. A. Coxon; S. Friligkos; J. Antonopoulos; N. A. Economou

Book ID: 112981754
Publisher: Springer-Verlag
Year: 1994
Tongue: English
Weight: 455 KB
Volume: 74
Category: Article
ISSN: 1219-7580
DOI: 10.1007/bf03055247

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