Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

✍ Scribed by Farmer, Damon B.; Chiu, Hsin-Ying; Lin, Yu-Ming; Jenkins, Keith A.; Xia, Fengnian; Avouris, Phaedon

• Book ID: 115446891
• Publisher: American Chemical Society
• Year: 2009
• Tongue: English
• Weight: 734 KB
• Volume: 9
• Category: Article
• ISSN: 1530-6984
• DOI: 10.1021/nl902788u

✦ Synopsis

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.