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Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

โœ Scribed by Farmer, Damon B.; Chiu, Hsin-Ying; Lin, Yu-Ming; Jenkins, Keith A.; Xia, Fengnian; Avouris, Phaedon


Book ID
115446890
Publisher
American Chemical Society
Year
2009
Tongue
English
Weight
734 KB
Volume
9
Category
Article
ISSN
1530-6984

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Utilization of a Buffered Dielectric to
โœ Farmer, Damon B.; Chiu, Hsin-Ying; Lin, Yu-Ming; Jenkins, Keith A.; Xia, Fengnia ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› American Chemical Society ๐ŸŒ English โš– 734 KB

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operat