Experimental observation of FIB induced
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G. Spoldi; S. Beuer; M. Rommel; V. Yanev; A.J. Bauer; H. Ryssel
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Article
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2009
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Elsevier Science
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English
β 330 KB
Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to analyze focused ion beam (FIB) induced lateral damage around milled structures on silicon. For this purpose, circular shaped structures were realized, and the influence of the implanted Ga dose (ra