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Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices

✍ Scribed by Chen, Peiliang; Ma, Xiangyang; Yang, Deren

Book ID
125452074
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
426 KB
Volume
89
Category
Article
ISSN
0003-6951

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati