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Excitonic ultraviolet lasing in ZnO-based light emitting devices

✍ Scribed by Ryu, Y. R.; Lubguban, J. A.; Lee, T. S.; White, H. W.; Jeong, T. S.; Youn, C. J.; Kim, B. J.


Book ID
115534762
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
450 KB
Volume
90
Category
Article
ISSN
0003-6951

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## Abstract ZnO/GaN p‐i‐n heterojunctions light emitting diodes were fabricated by plasma‐assisted molecular beam epitaxy. We make use of high resistivity of nitrogen doped ZnO to fabricate n‐ZnO/i‐ZnO/p‐GaN heterojunction light emitting diode. The emission of i‐ZnO was obtained due to the limitati