Fabrication of transparent p–n junction diode based on oxide semiconductors deposited by RF magnetron sputtering
✍ Scribed by Seiki Kim; Hyewon Seok; Hyunseok Lee; Mijae Lee; Duckkyun Choi; Kyounghoon Chai
- Book ID
- 113529030
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 458 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0272-8842
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
We grew heterojunction light emitting diode (LED) structures with various n-type semiconducting layers by magnetron sputtering on p-type GaN at high temperature. Because the undoped ZnO used as an active layer was grown under oxygen rich atmosphere, all LED devices showed the EL characteristics corr
p-Type aluminum-nitrogen (Al-N) co-doped zinc oxide (ZnO) thin films were deposited on glass substrate at 300 1C by RF reactive magnetron sputtering using an aluminum-doped zinc oxide (2.4 wt%Al 2 O 3 ) target and N 2 reactive gas. In addition, the effect of N 2 reactive gas on the electrical and st