The ability to directly pattern the surface of semiconductor wafers using very accurately controlled fluences of finely focused high-energy ion beams has opened up new research directions for the fabrication of a variety of high-aspect ratio, multi-level microstructures in silicon. A beam of hydroge
✦ LIBER ✦
Fabrication of microstructures in III–V semiconductors by proton beam writing
✍ Scribed by F. Menzel; D. Spemann; J. Lenzner; W. Böhlmann; G. Zimmermann; T. Butz
- Book ID
- 108224514
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 744 KB
- Volume
- 267
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
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