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Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

โœ Scribed by B.-J. Kim; T. Tanikawa; Y. Honda; M. Yamaguchi; N. Sawaki


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
656 KB
Volume
42
Category
Article
ISSN
1386-9477

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Growth and fabrication of AlGaN/GaN HEMT
โœ Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 262 KB

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H