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Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

✍ Scribed by M. G. Mynbaeva; P. L. Abramov; A. A. Lebedev; A. S. Tregubova; D. P. Litvin; A. V. Vasiliev; T. Yu. Chemekova; Yu. N. Makarov

Book ID: 111444962
Publisher: Springer
Year: 2011
Tongue: English
Weight: 739 KB
Volume: 45
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782611060157

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## Abstract High quality base layer aluminum nitride films have become increasingly desirable with the advent of deep ultraviolet (<280 nm) emitters for water purification, solid state lighting, and biochemical detection applications. In this study, the influence of the MOCVD growth conditions on t