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Improvement of crystal quality in ammonothermal growth of bulk GaN

โœ Scribed by Tadao Hashimoto; Edward Letts; Masanori Ikari; Yoshihiro Nojima

Book ID
108166077
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
584 KB
Volume
312
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES

Numerical simulation of ammonothermal gr
Numerical simulation of ammonothermal growth processes of GaN crystals
โœ Yan-Ni Jiang; Qi-Sheng Chen; V. Prasad ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 512 KB

Gallium nitride (GaN) is a semiconductor material with a wide array of applications in the manufacture of blue/green light LEDs, lasers and high power electronic devices. In the ammonothermal growth, ammonia is used as a solvent instead of water as in the hydrothermal process. We modeled ammonotherm

Improvement of structural quality in the
Improvement of structural quality in the initial stage of GaN growth by basic ammonothermal method
โœ Yoshihiro Nojima; Masanori Ikari; Edward Letts; Tadao Hashimoto ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 327 KB

Study on initial growth of GaN revealed evolutional improvement of grain structure in the initial stage of ammonothermal growth. GaN crystals grown on N-polar surface of GaN platelets for various growth durations were characterized with the X-ray diffraction and Nomarski microscopy. The full width h