Fabrication of As-doped p-type ZnO thin film and ZnO nanowire inserted p–n homojunction structure
✍ Scribed by Manoj Kumar; Jyoti Prakash Kar; In-Soo Kim; Se-Young Choi; Jae-Min Myoung
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 357 KB
- Volume
- 97
- Category
- Article
- ISSN
- 1432-0630
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Arsenic doped p-type ZnO thin films were grown on sapphire substrate by magnetron sputtering. As grown films reveal p-type conduction confirmed by Hall-effect and photoluminescence measurements. The p-type film with a hole concentration of 2.16× 10 17 cm -3 , mobility of 1.30 cm 2 /V.s and resistivi
## Abstract An all‐oxide transparent p–n heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/p‐CuAlO~2~/n‐ZnO/In electrode on the glass substrate. The p‐CuAlO~2~ thin film was deposited by e‐beam evaporation, which was annealed by the wet‐oxidation metho