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Fabrication of a transparent p-n heterojunction thin film diode composed of p-CuAlO2/n-ZnO

✍ Scribed by Kim, Dae-Sung ;Park, Tae-Jin ;Kim, Dae-Hyun ;Choi, Se-Young

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
109 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

An all‐oxide transparent p–n heterojunction on a glass substrate was fabricated. The structure of the diode was ITO electrode/p‐CuAlO~2~/n‐ZnO/In electrode on the glass substrate. The p‐CuAlO~2~ thin film was deposited by e‐beam evaporation, which was annealed by the wet‐oxidation method. The p–n heterojunction thin film diode showed rectifying current–voltage characteristics, dominated in forward bias by the flow of space‐charge‐limited current. The ratio of forward current to the reverse current exceeded 40 within the range of applied voltages of –4.0 to +4.0 V and the turn‐on voltage was 0.3 V. Optical transmission of the diode was about 40% in the visible range. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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