𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication of a poly-Si thin-film transistor with storage capacitor

✍ Scribed by A Mimura; E Kimura; T Suzuki; K Ono; J.-I Ohwada; N Konishi; K Miyata

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
869 KB
Volume
12
Category
Article
ISSN
0141-9382

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electro-optical simulation of a–Si thin-
Electro-optical simulation of a–Si thin-film-transistor liquid-crystal display pixels
✍ J. M. S. Pena; I. Pérez; C. Vázquez; J. M. Otón 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 97 KB

## Abstract An analysis of an amorphous silicon (a–Si) thin‐film‐transistor liquid‐crystal display (TFT–LCD) pixel is presented. The electro‐optical model combines the electrical properties of the switching element and the optical performance of a twisted nematic (TN) liquid‐crystal cell. © 2001 Jo

Stacked gate insulator of photooxide and
Stacked gate insulator of photooxide and PECVD film from SiH4 and N2O for low-temperature poly-Si thin-film transistor
✍ Yukihiko Nakata; Tetsuya Okamoto; Takashi Itoga; Toshimasa Hamada; Yutaka Ishii 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 1019 KB

A stacked gate insulator consisting of photooxide and PECVD film prepared from SiH 4 and N 2 O for use in low-temperature poly-Si thin-film transistors has been developed. The rate of photooxidation using a Xe excimer lamp is the same for (100) and (111) single-crystal Si wafers, and SiO 2 with good