## Abstract In this study we report on the optimization of the contact resistance by surface treatment in shortβchannel bottomβcontact OTFTs based on pentacene as semiconductor and SiO~2~ as gate dielectric. The devices have been fabricated by means of nanoimprint lithography with channel lengths i
β¦ LIBER β¦
Analysis of short channel effects in poly-Si thin film transistors: A new method
β Scribed by C. Reita; P. Migliorato; A. Pecora; G. Fortunato; L. Mariucci
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 217 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0167-9317
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