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Fabrication of 3 nm wires using 100 keV electron beam lithography and poly(methyl methacrylate) resist

โœ Scribed by Cumming, D. R. S.; Thoms, S.; Beaumont, S. P.; Weaver, J. M. R.


Book ID
120193605
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
559 KB
Volume
68
Category
Article
ISSN
0003-6951

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We report the fabrication of 6-nm Au-Pd structures using 30-keV e-beam lithography in a standard double-layer poly(methylmethacrylate) resist on silicon and subsequent lift-off. Line arrays with periods as small as 27 nm were realized. Details of the processing are presented and the dependence of th