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Fabrication of 5â7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist

✍ Scribed by Chen, Wei; Ahmed, Haroon

No coin nor oath required. For personal study only.

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✍ Cumming, D. R. S.; Thoms, S.; Beaumont, S. P.; Weaver, J. M. R. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 559 KB

Fabrication of 5â7 nm wide etched lines in silicon using 100 keV electron-beam lithography and polymethylmethacrylate resist