Fabrication and properties of dot array using electron-beam-induced deposition

✍ Scribed by M. Komuro; H. Hiroshima

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 264 KB
• Volume: 35
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00105-0

✦ Synopsis

Electron-beam(EB)-induced deposition using precursor molecule of WF6 is applied to making metal/insulator/metal tunnel junctions for single electron transport devices.

The SiO2 substrate pre-treated by oxygen plasma is contaminated with hydro-carbon material and the deposits show rapid decrease in resistance with the increase in EB dose and higher resistivity of about 100 ~ cm at 300 K which decreases by 20% at 130 K.

In contrast, the thickness of deposits on clean substrates is 1/20 as small as the case of contaminated substrate for the same exposure dose.

Also deposits with a lower resistivity of 4x10 3 f2 cm can be obtained. Under such deposition conditions, single electron transistor structure is fabricated which is composed of several dots connected to single line deposits with deposits for gate electrode 300 nm distant from the dot region. The source-drain voltage dependence of source current for 7 dots with 10 run pitch exhibits Coulomb blockade characteristics at 12 K.