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Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions

โœ Scribed by Song, Dengyuan; Cho, Eun-Chel; Conibeer, Gavin; Huang, Yidan; Green, Martin A.

Book ID
120165237
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
695 KB
Volume
91
Category
Article
ISSN
0003-6951

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Capacitance-voltage (C V) characteristics and temperature dependence of current density-voltage (J-V) characteristics of as-grown amorphous gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type crystalline silicon (c-Si(n)) have been measured. It has been found that the depletion laye