𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide

✍ Scribed by Khalid, A.H.; Rezazadeh, A.A.

Book ID
114455578
Publisher
The Institution of Electrical Engineers
Year
1996
Tongue
English
Weight
618 KB
Volume
143
Category
Article
ISSN
1350-2433

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Transparent indium tin oxide as inkjet-p
Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors
✍ Hoffmann, Rudolf C. ;Dilfer, Stefan ;Schneider, JΓΆrg J. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 613 KB

## Abstract Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10^βˆ’3^ Ω cm were observed, with a t

Top-gate-type ambipolar organic field-ef
Top-gate-type ambipolar organic field-effect transistors with indium–tin oxide drain/source electrodes using polyfluorene derivatives
✍ Hirotake Kajii; Kyohei Koiwai; Youhei Hirose; Yutaka Ohmori πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 690 KB

The characteristics of solution processed top-gate-type organic field-effect transistors (OFETs) with indium-tin oxide (ITO) drain/source electrodes using polyfluorene derivatives were investigated. An OFET with poly(9,9-dioctylfluorene) (F8) as an active layer, which contains only a fluorene backbo