Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors

✍ Scribed by Hoffmann, Rudolf C. ;Dilfer, Stefan ;Schneider, Jörg J.

• Book ID: 105366596
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 613 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201127362

✦ Synopsis

Abstract

Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10^−3^ Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source–drain structures could be obtained by inkjet‐printing and field‐effect transistors were constructed using poly(3‐hexylthiophene) (P3HT) as organic semiconductor. magnified image