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A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating

โœ Scribed by Dasgupta, S; Gottschalk, S; Kruk, R; Hahn, H

Book ID
120347967
Publisher
Institute of Physics
Year
2008
Tongue
English
Weight
1000 KB
Volume
19
Category
Article
ISSN
0957-4484

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## Abstract The concept of using ion conducting membranes (50โ€“150 ฮผm thick) for gating lowโ€voltage (1 V) organic fieldโ€effect transistors (OFETs) is attractive due to its lowโ€cost and largeโ€area manufacturing capabilities. Furthermore, the membranes can be tailorโ€made to be ion conducting in any de