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Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing

✍ Scribed by T.N.T. Nguyen; Y.G. Seol; N.-E. Lee

Book ID
113834335
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
699 KB
Volume
12
Category
Article
ISSN
1566-1199

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The characteristics of solution processed top-gate-type organic field-effect transistors (OFETs) with indium-tin oxide (ITO) drain/source electrodes using polyfluorene derivatives were investigated. An OFET with poly(9,9-dioctylfluorene) (F8) as an active layer, which contains only a fluorene backbo