✦ LIBER ✦
Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator
✍ Scribed by P.-Y. Chan, M. Gogna, E. Suarez, F. Al-Amoody…
- Book ID
- 120925695
- Publisher
- Springer US
- Year
- 2013
- Tongue
- English
- Weight
- 757 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0361-5235
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