Extraction of gate oxide thickness from C–V measurements

✍ Scribed by Frans P. Widdershoven

• Book ID: 104305618
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 155 KB
• Volume: 59
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(01)00609-8

✦ Synopsis

A new empirical method is described to extract the oxide thickness from C-V curves of MOS capacitors in accumulation. An analytical expression is derived for the oxide capacitance. The method is applied to MOS capacitors with metal or poly-Si gates, and with varying oxide thickness.