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Experimental study of power MOSFET’s gate damage in radiation environment

✍ Scribed by G. Busatto; F. Iannuzzo; A. Porzio; A. Sanseverino; F. Velardi; G. Currò

Book ID: 108210647
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 315 KB
Volume: 46
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2006.07.069

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