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Simulation study of single-event gate rupture using radiation-hardened stripe cell power mosfet structures

✍ Scribed by Titus, J.L.; Yen-Sheng Su, ; Savage, M.W.; Mickevicius, R.V.; Wheatley, C.F.


Book ID
111859028
Publisher
IEEE
Year
2003
Tongue
English
Weight
634 KB
Volume
50
Category
Article
ISSN
0018-9499

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