Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si1-xGex S/D p-MOSFETs

✍ Scribed by Nakashima, Toshiyuki; Idemoto, Tatsuya; Tsunoda, Isao; Takakura, Kenichiro; Yoneoka, Masashi; Ohyama, Hidenori; Yoshino, Kenji; Simoen, Eddy; Claeys, Cor

• Book ID: 121290777
• Publisher: Trans Tech Publications, Ltd.
• Year: 2012
• Tongue: English
• Weight: 358 KB
• Volume: 725
• Category: Article
• ISSN: 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.725.235