Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure

✍ Scribed by Busatto, G.; Currò, G.; Iannuzzo, F.; Porzio, A.; Sanseverino, A.; Velardi, F.

• Book ID: 104058008
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 487 KB
• Volume: 48
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2008.07.030