We discuss the fabrication of a FLASH EEPROM floating gate memory device with a cell size of 0.0896~m. The floating gate level utilized an alternating aperture phase shift mask, a binary mask was used to expose the control gate level. Linewidth changes over topography, due to reflectivity variations
โฆ LIBER โฆ
Experimental investigation of the impact of LWR on sub-100-nm device performance
โ Scribed by Hyun-Woo Kim; Ji-Young Lee; Shin, J.; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
- Book ID
- 114617648
- Publisher
- IEEE
- Year
- 2004
- Tongue
- English
- Weight
- 714 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0018-9383
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