๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Experimental Investigation of RF Noise Performance Improvement in Graded-Channel MOSFETs

โœ Scribed by Emam, M.; Sakalas, P.; Vanhoenacker-Janvier, D.; Raskin, J.-P.; Tao Chuan Lim; Danneville, F.


Book ID
114619653
Publisher
IEEE
Year
2009
Tongue
English
Weight
853 KB
Volume
56
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Improvement in RF performance of 40-nm I
โœ Chien-I Kuo; Heng-Tung Hsu; Chien-Ying Wu; Edward Y. Chang; Yu-Lin Chen; Wee-Chi ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 356 KB

Forty-nanometer InAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from